Presentation_1_Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron.pptx Dong Won Kim Woo Seok Yi Jin Young Choi Kei Ashiba Jong Ung Baek Han Sol Jun Jae Joon Kim Jea Gun Park 10.3389/fnins.2020.00309.s001 https://frontiersin.figshare.com/articles/presentation/Presentation_1_Double_MgO-Based_Perpendicular_Magnetic_Tunnel_Junction_for_Artificial_Neuron_pptx/12221444 <p>A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resistance change gradually increased with the input spike number. This behavior occurred when the spin electron directions between double Co<sub>2</sub>Fe<sub>6</sub>B<sub>2</sub> free and pinned layers in the p-STT-based neuron were switched from parallel to antiparallel states. In addition, a neuron circuit for integrate-and-fire operation was proposed. Finally, pattern-recognition simulation was performed for a single-layer SNN.</p> 2020-04-30 14:19:18 neuromorphic MRAM spiking neuron spiking neural network artificial neuron