Presentation_1_Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron.pptx
Dong Won Kim
Woo Seok Yi
Jin Young Choi
Kei Ashiba
Jong Ung Baek
Han Sol Jun
Jae Joon Kim
Jea Gun Park
10.3389/fnins.2020.00309.s001
https://frontiersin.figshare.com/articles/presentation/Presentation_1_Double_MgO-Based_Perpendicular_Magnetic_Tunnel_Junction_for_Artificial_Neuron_pptx/12221444
<p>A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resistance change gradually increased with the input spike number. This behavior occurred when the spin electron directions between double Co<sub>2</sub>Fe<sub>6</sub>B<sub>2</sub> free and pinned layers in the p-STT-based neuron were switched from parallel to antiparallel states. In addition, a neuron circuit for integrate-and-fire operation was proposed. Finally, pattern-recognition simulation was performed for a single-layer SNN.</p>
2020-04-30 14:19:18
neuromorphic
MRAM
spiking neuron
spiking neural network
artificial neuron